BCV62BE6433HTMA1

Overview

The BCV62BE6433HTMA1 is an NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and configured as a single transistor. The device supports a maximum collector current of 100 mA and features a collector-emitter voltage rating of 80 V, with a collector-base voltage of 80 V and an emitter-base voltage of 7 V. Key electrical parameters include a DC current gain (hFE) ranging from 250 to 640, a transition frequency (fT) of 250 MHz, and a power dissipation capacity of 330 mW. It operates within a temperature range of -65°C to +150°C.

Feature Summary

• High-voltage capability for signal processing applications
• Wide DC current gain band for consistent amplification
• Automotive qualification compliant with AEC-Q101 standards

Applications

• General-purpose signal amplification
• Switching circuits in automotive electronics
• Driver stages for low-power loads

Procurement Notes

Verify the specific hFE binning code 'E' corresponds to the required gain range of 250-640 for your design. Confirm the suffix HTMA1 indicates the correct tape-and-reel packaging format. Ensure the component meets RoHS compliance requirements for your manufacturing process.

Selection Notes

Select this component when an NPN BJT requires an 80 V collector-emitter breakdown voltage, which exceeds standard 45 V or 50 V variants. The high hFE range minimizes base drive current requirements. Verify that the SOT-23-3 thermal dissipation limits are sufficient for the intended operating conditions.

Part Context

This part belongs to the BCV62 series of high-voltage NPN transistors. It shares the same physical footprint and pinout as other members of the BCV6x family but is distinguished by its specific voltage ratings and gain classification. It serves as a specialized alternative to lower-voltage general-purpose transistors in robust circuit designs.

Replacement Considerations

Direct replacements must match the 80 V VCEO rating and SOT-23-3 package. Verify equivalent hFE bins if gain linearity is critical. Cross-reference with other manufacturers offering 80 V NPN SOT-23 devices.