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Product Detailed Parameters
- Description：TRANS 2PNP 30V 0.1A PG-SOT-1433D
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：2 PNP (Dual)
- Current - Collector (Ic) (Max)：100mA
- Voltage - Collector Emitter Breakdown (Max)：30V
- Vce Saturation (Max) @ Ib, Ic：650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max)：15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：420 @ 2mA, 5V
- Power - Max：300mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-253-4, TO-253AA
- Supplier Device Package：PG-SOT-143-3D
- Grade：-
- Qualification：-
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Overview
The BCV62CE6327HTSA1 is a PNP silicon bipolar junction transistor (BJT) from Infineon Technologies, designed for general-purpose applications. It features a collector-emitter voltage (VCEO) of 30 V and a continuous collector current of 100 mA. The device operates within a temperature range of -65 °C to +150 °C and is housed in an SOT-143-4 surface-mount package. With a power dissipation of 300 mW and a transition frequency (fT) of 250 MHz, it supports efficient switching. The component meets AEC-Q100 automotive qualification standards, ensuring reliability in demanding environments.
Feature Summary
- Automotive-grade reliability certified under AEC-Q100 standards
- High thermal stability with extended operating temperature range up to 150 °C
- Compact SOT-143-4 surface-mount packaging for space-constrained designs
Applications
- General-purpose switching circuits in automotive electronics
- Low-power signal amplification stages
- Driver circuits for sensors and actuators
Procurement Notes
Verify the specific suffix 'C' against official Infineon documentation to confirm binning or grading variations compared to standard variants. Confirm end-of-life status as some BCV62A listings indicate obsolescence. Ensure compatibility with existing PCB footprints for SOT-143-4 packages during procurement planning.
Selection Notes
Select this component when automotive qualification and high-temperature operation are required. Compare hFE ranges and saturation voltages against alternative PNP transistors if specific gain characteristics are critical. Verify that the 100 mA current rating suffices for the intended load without exceeding the 300 mW power dissipation limit at maximum ambient temperatures.
Part Context
This part belongs to the BCV62 series of low-power PNP transistors. Similar parts include BCV62AE6327HTSA1, which shares the same package and electrical ratings but may differ in specific binning or ordering suffixes. The series is widely used in automotive and industrial control applications requiring reliable small-signal switching.
Replacement Considerations
BCV62AE6327HTSA1 is a direct functional substitute within the same series. Verify pinout compatibility and ensure that any alternative PNP transistor meets the 30 V VCEO and 100 mA IC requirements while fitting the SOT-143-4 footprint.
