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The BCW66HE6327 is an NPN silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in a surface-mount SOT-23-3 package. It features a maximum collector-emitter voltage of 45 V and a continuous collector current of 800 mA. The device has a power dissipation rating of 500 mW and a transition frequency of 170 MHz. DC current gain ranges from 250 to 630. It operates between -65°C and +150°C and holds AEC-Q100 qualification for automotive applications.
Verify the specific ordering suffix E6327 to confirm the tape-and-reel packaging format. Confirm RoHS compliance status through official documentation. Check the product lifecycle status as end-of-life indications may affect long-term availability. Ensure the component matches the required SOT-23-3 footprint for PCB integration.
Select this component for designs requiring high current gain and automotive qualification in a compact SMD package. Compare saturation voltage and power dissipation limits against circuit requirements. Consider the 45V voltage rating for appropriate headroom in low-voltage automotive systems. Verify thermal management capabilities within the 500mW dissipation limit.
This part belongs to the BCW66 series of NPN transistors designed for general-purpose and audio applications. It shares the SOT-23-3 form factor with other small-signal devices but offers higher current handling. The series is optimized for cost-effective mass production in consumer and automotive electronics.
BCW66KHE6327HTSA1: Pinned-compatible NPN alternative with similar electrical characteristics.