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The onsemi BCW30LT3 is a single NPN bipolar junction transistor (BJT) housed in an SOT-23 surface-mount package. It features a maximum collector-emitter voltage (VCEO) of 45 V and a collector-base voltage (VCBO) of 60 V. The device supports a continuous DC collector current of 100 mA with a power dissipation rating of 225 mW. Key electrical characteristics include a minimum DC current gain (hFE) of 110 and a transition frequency (fT) of 100 MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific suffix LT3 against official onsemi documentation to confirm tape-and-reel packaging specifications and quantity per reel. Ensure the component meets required RoHS compliance standards for your manufacturing process. Cross-reference the datasheet revision date to confirm parameter consistency, as older revisions may differ slightly from current production units.
Select this component when a low-voltage, low-current NPN switch or amplifier is needed in a small outline package. Compare hFE ranges and fT limits against circuit requirements to ensure adequate gain and bandwidth. Consider thermal management constraints due to the 225 mW power dissipation limit in the SOT-23 package during selection.
The BCW30LT3 belongs to the BCW30 series of general-purpose NPN transistors manufactured by onsemi. This series is widely used in consumer electronics and industrial control systems where reliable switching and amplification are required in compact form factors. The SOT-23 package allows for automated assembly and high-density PCB layouts.
Consult official substitution guides for verified equivalents such as the BC847 or BC547 series, ensuring pinout compatibility and matching voltage/current ratings. Verify that alternative components meet the same thermal and electrical specifications before implementation.