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The onsemi BCW32 is an NPN general-purpose amplifier transistor housed in a SOT-23 surface-mount package. It supports a maximum collector current of 500 mA and withstands collector-emitter and collector-base voltages of 32 V each, with an emitter-base voltage rating of 5.0 V. The device features a DC current gain (hFE) ranging from 200 to 450 at 2.0 mA, a transition frequency of 200 MHz, and a total power dissipation capacity of 350 mW. Operating temperatures span from -55°C to +150°C.
Verify the specific manufacturer origin, as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Confirm RoHS compliance status and check for any specific ordering suffixes that may indicate material composition or packaging variations. Ensure the supplier provides valid traceability documentation for this legacy part number.
Select this component when a small-footprint NPN transistor is required for low-to-medium current amplification. Compare against alternatives based on the required hFE range and saturation voltage characteristics. Consider the thermal resistance and power derating curves if operating near the maximum junction temperature limits in confined spaces.
The BCW32 belongs to the family of small-signal NPN transistors commonly used in consumer electronics and industrial control systems. Manufactured initially by Fairchild Semiconductor, it remains a standard choice for designs requiring reliable switching and amplification in compact SOT-23 packages.
Consult official substitution guides for equivalent NPN transistors in SOT-23 packages with similar voltage and current ratings. Verify pinout compatibility and electrical parameter overlaps before replacing the original component.
The absolute maximum DC collector current is rated at 500 mA.
No, the datasheet explicitly states that products are not authorized for use as critical components in life support devices without express written approval.
The DC current gain (hFE) typically ranges from 200 to 450 when tested at a collector current of 2.0 mA and VCE of 5.0 V.