BCW32LT1G

BCW32LT1G

$0.15
  • Description:TRANS NPN 32V 0.1A SOT23-3
  • Series:-

SKU:5c58e67472ef Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS NPN 32V 0.1A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
  • Power - Max:225 mW
  • Frequency - Transition:-
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BCW32LT1G

Overview

The BCW32LT1G is a PNP bipolar junction transistor manufactured by onsemi, designed for general-purpose switching and amplification applications. It is housed in a surface-mount SOT-23 package (CASE 318-08) with three terminals. The device features a maximum collector current of 100mA and a collector-emitter voltage rating of 50V. It offers a minimum DC current gain (hFE) of 110 at a collector current of -2mA, ensuring reliable performance in low-power circuit designs.

Feature Summary

  • Utilizes a compact SOT-23 surface-mount package for efficient PCB space utilization
  • Provides high current gain characteristics suitable for signal amplification tasks
  • Engineered for general-purpose switching operations within standard voltage limits

Applications

  • General-purpose signal amplification circuits
  • Low-power electronic switching applications
  • Driver stages in consumer electronics devices

Procurement Notes

Verify the component authenticity by checking the manufacturer's marking code and date code against official onsemi documentation. Ensure the ordering suffix matches the specific tape-and-reel configuration required for your assembly process. Confirm that the package variant corresponds to the designated CASE 318-08 specification to guarantee mechanical fit and electrical compatibility.

Selection Notes

Select this component when a PNP transistor with a 50V collector-emitter voltage rating is required for compact designs. It is appropriate for applications needing a 100mA continuous collector current capability. Consider its SOT-23 footprint constraints and thermal dissipation requirements relative to the intended load conditions and ambient operating temperatures.

Part Context

This part belongs to the BCW32 series of PNP transistors from onsemi, which are widely used in portable and battery-operated equipment. The 'LT1G' suffix typically indicates a specific packaging and environmental compliance designation, such as lead-free status, distinguishing it from other variants in the broader product family.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. Potential alternatives may include other PNP transistors in SOT-23 packages with comparable VCEO and IC ratings, provided pin configurations and electrical characteristics align with the original design specifications.

BCW32LT1GBCW32LT1G
$0.15
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