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The BCW32T116 is a single NPN bipolar junction transistor manufactured by ROHM Semiconductor. It utilizes silicon technology and is housed in an SOT-23-3 surface-mount package. The device supports a maximum collector current of 100 mA and features a collector-emitter breakdown voltage (VCEO) of 32 V, with a collector-base voltage (VCBO) also rated at 32 V. Power dissipation is specified at 200 mW, and the component operates within a temperature range up to +150°C.
Verify component status as Not Recommended for New Designs (NRND). Confirm RoHS compliance details via official datasheet. Ensure sourcing channels provide valid traceability for legacy inventory. Check specific manufacturing lot dates against project timelines due to potential end-of-life constraints.
Select this part for low-voltage, low-current NPN switching tasks requiring small footprint. Compare hFE gain ranges and power dissipation limits against load requirements. Consider alternative active devices if new design standards prohibit NRND components or require higher voltage margins.
This component belongs to the BCW32 series of single NPN transistors. It shares family characteristics with related variants but is distinct in its specific pinout and electrical ratings defined by the T116 suffix indicating tape and reel packaging format.
Public confirmed substitute part numbers are not available in the provided documentation. Consult manufacturer obsolescence notices for direct replacements.