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The BCW33 is an NPN general-purpose amplifier transistor manufactured by onsemi (formerly Fairchild Semiconductor). It is housed in a SOT-23 package and designed for collector currents up to 300mA. Key electrical parameters include a Collector-Emitter Voltage (VCEO) of 32V, a DC Current Gain (hFE) ranging from 420 to 800 at IC=2mA, and a Collector-Emitter Saturation Voltage (VCE(sat)) of 0.25V at IC=10mA. The device supports a maximum junction temperature of 150°C.
Verify the manufacturer origin carefully, as the component was originally produced by Fairchild Semiconductor before its acquisition by onsemi. Ensure the datasheet revision matches your design requirements. Confirm that the SOT-23 package dimensions align with your PCB footprint specifications prior to finalizing procurement.
Select this component when high current gain is required for low-power amplification tasks. The 32V rating limits its use in higher voltage environments. Consider the thermal resistance characteristics if operating near the maximum power dissipation limit. Verify compatibility with the specific manufacturing site if automotive or strict quality control standards are mandated.
This component belongs to the BCW series of small-signal transistors. It serves as the NPN counterpart to the PNP BCW30. The series is widely used in consumer electronics and industrial control systems where compact surface-mount packaging and reliable switching characteristics are essential for circuit design efficiency.
BCW33LT1G
The absolute maximum DC collector current is rated at 500 mA.
Standard BCW33 devices are not explicitly AEC-Q101 qualified; check for specific suffixes like 'S' or consult the manufacturer for automotive-grade variants.
The noise figure is typically 10 dB at IC = 0.2mA, VCE = 5V, and RS = 2.0kΩ.