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The BCW60A is an NPN epitaxial silicon transistor housed in a SOT-23 surface-mount package. It features a collector-emitter voltage of 32 V and a continuous collector current of 100 mA with 350 mW power dissipation. The device offers a DC current gain (hFE) range of 120 to 460 at IC=2mA, VCE=5V. Key electrical parameters include a collector-base breakdown voltage of 32 V, emitter-base breakdown of 5 V, and a transition frequency of 125 MHz. Saturation voltages are specified at 0.7 V for VBE(sat) and 0.55 V for VCE(sat) under standard test conditions.
Verify the manufacturer origin carefully, as Fairchild Semiconductor was acquired by onsemi. Confirm the specific datasheet revision matches your design requirements. Check for RoHS compliance status if environmental regulations apply to your assembly process. Ensure the SOT-23 footprint aligns with your PCB layout specifications before finalizing procurement orders.
Select this component when a low-voltage NPN transistor with moderate current handling is required. The BCW60A provides a distinct hFE binning compared to variants like BCW60B or C. Consider the 32 V rating for low-side switching tasks. Evaluate the 125 MHz transition frequency against your signal speed requirements to ensure adequate performance margins.
This part belongs to the BCW60 series of NPN transistors, which includes variants distinguished primarily by their DC current gain ranges. The series utilizes a standardized SOT-23 three-terminal package. These devices are engineered for cost-effective integration into consumer electronics and industrial control boards requiring reliable small-signal performance.
Direct substitutes within the same family include BCW60B, BCW60C, and BCW60D, provided their specific hFE gain bins match the circuit's biasing needs. Verify pinout compatibility remains consistent across these variants.