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The BCW60B is an NPN epitaxial silicon transistor housed in a SOT-23 package. It features a collector-emitter breakdown voltage of 32 V and a maximum continuous collector current of 100 mA. The device dissipates up to 350 mW at 25°C ambient temperature. Electrical characteristics include a DC current gain (hFE) ranging from 180 to 310 at IC=2mA, a transition frequency (fT) of 125 MHz, and a noise figure of 6 dB. Turn-on time is specified at 150 ns with a turn-off time of 800 ns.
Verify the manufacturer origin, as Fairchild Semiconductor was acquired by onsemi. Confirm RoHS compliance status against specific production batches. Ensure the SOT-23 pinout matches the Base-Emitter-Collector configuration defined in the datasheet. Check for any obsolescence notices or lifecycle changes affecting long-term supply availability.
Select this component when a low-noise NPN transistor with moderate current handling is required. The BCW60B offers higher current gain than the BCW60A variant but lower than the BCW60C. Consider the 32V voltage rating and 100mA current limit for circuit design constraints. Evaluate thermal dissipation requirements if operating near the 350mW power limit.
This part belongs to the BCW60 series, which includes variants A, B, C, and D differentiated primarily by their DC current gain ranges. All variants share identical electrical ratings regarding voltage, current, and power dissipation. The series utilizes a standard SOT-23 surface-mount package widely used in compact electronic designs.
BCW60A, BCW60C, BCW60D