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Product Detailed Parameters
- Description：TRANS NPN 32V 0.1A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：550mV @ 1.25mA, 50mA
- Current - Collector Cutoff (Max)：20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 2mA, 5V
- Power - Max：330 mW
- Frequency - Transition：250MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BCW60BE6327 is an NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and is qualified to AEC-Q100 standards for automotive applications. Key electrical parameters include a maximum collector-emitter voltage of 45 V, a continuous collector current of 100 mA, and a power dissipation rating of 250 mW. The device features a DC current gain range of 200 to 630 and a transition frequency of 250 MHz, with an operating temperature range from -55°C to +150°C.
Feature Summary
- Automotive-grade qualification compliant with AEC-Q100 standards
- High DC current gain ranging from 200 to 630
- Transition frequency of 250 MHz for signal amplification
- Low collector-base leakage current
Applications
- General-purpose switching and amplification in automotive electronics
- Driver circuits for low-power loads
- Signal processing in consumer electronic devices
Procurement Notes
Verify the specific suffix 'E6327' against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure that the component meets the required AEC-Q100 reliability standards for your target application environment. Cross-reference the datasheet for exact thermal characteristics and derating curves before finalizing the design.
Selection Notes
Select this component when an NPN BJT with high gain and automotive qualification is required in a compact SOT-23-3 footprint. It serves as a suitable alternative for general-purpose amplification tasks where low leakage and moderate speed are necessary. Consider the 45V voltage rating and 100mA current limit when designing the circuit load.
Part Context
This part belongs to the BCW60 series of NPN silicon transistors designed for general-purpose use. The series is characterized by high gain and low noise, making it suitable for various analog and digital switching applications. The E6327 suffix typically denotes specific tape-and-reel packaging configurations used in automated assembly processes.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Generic replacements may not match the AEC-Q100 qualification or the specific hFE binning ranges.
