BCW60BE6327HTSA1

Description：TRANS NPN 32V 0.1A PG-SOT23
Series：-

SKU:e48d3f9db0db Category: Single Bipolar Transistors Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 32V 0.1A PG-SOT23
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：32 V
Vce Saturation (Max) @ Ib, Ic：550mV @ 1.25mA, 50mA
Current - Collector Cutoff (Max)：20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 2mA, 5V
Power - Max：330 mW
Frequency - Transition：250MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23
Grade：-
Qualification：-

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BCW60BE6327HTSA1

Overview

The BCW60BE6327HTSA1 is a single NPN silicon bipolar junction transistor manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and rated for a maximum collector-emitter voltage of 32 V with a continuous collector current of 100 mA. The device features a transition frequency of 250 MHz and a power dissipation capacity of 330 mW. It includes an AEC-Q100 qualification, supporting operation within a temperature range of -65°C to +150°C.

Feature Summary

AEC-Q100 qualified for automotive reliability standards
Designed for audio-frequency input stages and driver circuits
Single NPN configuration in compact SMD packaging

Applications

Audio-frequency input stages
Driver circuits
General-purpose switching applications

Procurement Notes

Verify the component status as obsolete or end-of-life before procurement planning. Confirm that the specific suffix matches the required electrical characteristics and packaging format. Ensure compatibility with existing PCB footprints and thermal management requirements. Check for valid replacement options if production continuity is required.

Selection Notes

Select this component for applications requiring a 32 V NPN transistor with 100 mA current handling in a small surface-mount form factor. Consider its 250 MHz frequency response for audio or low-speed signal processing tasks. Verify that the 330 mW power dissipation rating meets the thermal constraints of the intended design environment.

Part Context

This part belongs to Infineon's general-purpose BJT portfolio, specifically tailored for surface-mount assembly. It serves as a standard switching and amplification element in consumer electronics and automotive systems where space efficiency and moderate power handling are prioritized over high-frequency RF performance.

Replacement Considerations

BCW60B
BCW60

FAQ

Is the BCW60BE6327HTSA1 suitable for high-frequency RF applications?

No, with a transition frequency of 250 MHz, it is optimized for audio-frequency and general-purpose switching rather than high-frequency RF operations.