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The BCW60DE6327HTSA1 is an NPN silicon general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in a surface-mount SOT-23-3 package and is qualified to the AEC-Q100 automotive standard. Key electrical parameters include a maximum collector-emitter voltage of 32 V, a maximum collector-base voltage of 32 V, and an emitter-base voltage of 6 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 330 mW. It features a transition frequency of 250 MHz and operates within a temperature range of -65°C to +150°C.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure that the AEC-Q100 qualification status aligns with your system's reliability requirements. Cross-reference the datasheet revision date to confirm parameter consistency before finalizing component selection.
Select this component when an NPN BJT with automotive qualification is required for space-constrained designs. Compare the 100 mA current limit and 330 mW power dissipation against load requirements. Consider the SOT-23-3 package dimensions for PCB layout compatibility and verify thermal resistance values if operating near maximum temperature limits.
This part belongs to the BCW60 series of general-purpose NPN transistors from Infineon. The series is designed for versatile use in both industrial and automotive environments. The E6327HTSA1 suffix denotes specific manufacturing and packaging attributes defined by Infineon for volume production.
Consult official Infineon substitution guides for verified equivalents. Generic cross-references may not preserve AEC-Q100 qualification or exact pinout configurations. Validate any alternative component against the original datasheet parameters before implementation.