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The BCW60FFE6327HTSA1 is an NPN silicon small-signal bipolar junction transistor (BJT) manufactured by Infineon Technologies. It features a maximum collector current of 100 mA and a collector-emitter voltage rating of 32 V. The device operates within a temperature range of -55°C to +150°C and is housed in a surface-mount SOT-23 package. It is AEC-Q100 qualified for automotive applications.
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance and specific tape-and-reel specifications during procurement. Ensure storage conditions meet moisture sensitivity level requirements prior to assembly.
Select this component for low-current NPN switching applications requiring automotive qualification. Compare against BCW60C variants for gain binning differences. Verify voltage ratings match circuit requirements, as the 32V limit is lower than standard 45V alternatives.
This part belongs to the BCW60 series of general-purpose NPN transistors. It shares the SOT-23 form factor with other Infineon BJT families but offers specific electrical characteristics tailored for low-power signal processing and switching tasks in compact electronic designs.