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The BCW61C,215 is a PNP general-purpose transistor manufactured by Nexperia. It utilizes silicon technology and is housed in a surface-mount SOT-23 (TO-236AB) plastic package with three leads. The device supports a maximum collector current of 100 mA and withstands collector-emitter and collector-base voltages up to 32 V. Key electrical characteristics include a minimum DC current gain of 40 at an emitter current of -10 µA and a transition frequency of 100 MHz. Thermal resistance from junction to ambient is rated at 500 K/W.
Verify the specific suffix '215' against official Nexperia documentation to confirm reel specifications and manufacturing origin details. Ensure the component matches the required PNP polarity and SOT-23 footprint before integration. Cross-reference datasheet revision dates to confirm technical parameters remain unchanged.
Select this component when a low-voltage PNP transistor is required for standard switching or amplification applications. The BCW61C variant provides a defined minimum current gain suitable for moderate signal processing needs. Verify that the operating temperature range of -65 °C to +150 °C aligns with the environmental requirements of the target system design.
This part belongs to the BCW61 series of PNP general-purpose transistors. The series includes variants distinguished by their DC current gain ranges, such as the BCW61B and BCW61D. The BCW61C offers a specific gain profile positioned between these alternatives, providing standardized performance for common discrete semiconductor applications.
The BCW60 is documented as the NPN complement within the same series. Direct substitution requires verifying pinout compatibility and ensuring the replacement meets the specific voltage and current ratings of the original circuit design.