ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：TRANS NPN 32V 0.8A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA, 1V
- Power - Max：225 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
Download product information
Overview
The BCW65ALT1 is an NPN silicon general-purpose transistor manufactured by onsemi. It operates with a collector-emitter voltage of 32 Vdc and a collector-base voltage of 60 Vdc. The device supports a continuous collector current of 800 mAdc and dissipates up to 225 mW on an FR-5 board. It features a DC current gain (hFE) ranging from 35 to 250 at IC = 100 µAdc and VCE = 10 Vdc. The transition frequency (fT) is 100 MHz, and it functions within a junction temperature range of -55°C to +150°C.
Feature Summary
- NPN silicon construction for general-purpose switching and amplification
- Wide DC current gain range suitable for various biasing requirements
- High breakdown voltage capability between collector and base terminals
Applications
- General-purpose signal amplification circuits
- Low-frequency switching applications
- Driver stages in consumer electronics
Procurement Notes
Verify the specific ordering suffix to ensure compliance with lead-free packaging requirements if mandated by project specifications. Confirm that the tape and reel dimensions align with automated assembly equipment capabilities. Cross-reference the manufacturer's latest soldering and mounting techniques reference manual to validate thermal management strategies during surface mount placement processes.
Selection Notes
Select this component when a low-voltage NPN transistor with moderate current handling is required. The wide hFE spread allows flexibility in circuit design without strict binning constraints. Ensure the operating environment stays within the specified thermal resistance limits to maintain reliability. Compare against the BCW65CLT1 variant if higher minimum gain thresholds are necessary for consistent performance across production batches.
Part Context
This device belongs to the BCW65 series of small-signal bipolar junction transistors designed for cost-effective mass production. It utilizes the SOT-23 package (CASE 318), which provides a compact footprint for space-constrained printed circuit boards. The series is widely utilized in portable devices and battery-operated systems due to its efficient power dissipation characteristics and standard pinout configuration.
Replacement Considerations
BCW65CLT1
FAQ
What is the maximum collector-base voltage rating?
The maximum collector-base voltage (VCBO) is rated at 60 Vdc.
How does the DC current gain vary with collector current?
For the BCW65ALT1, hFE ranges from 35 to 250 at IC = 100 µAdc, and from 75 to 250 at IC = 10 mA.
What is the typical turn-off time specification?
The turn-off time (toff) is typically 400 ns under conditions of IC = 150 mA and RL = 150 Ω.
