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The BCW65ALT1G is a silicon NPN single bipolar junction transistor (BJT) manufactured by onsemi. It is housed in an SMD/SMT SOT-23-3 package. The device supports a maximum DC collector current of 800 mA and features a collector-emitter breakdown voltage (VCEO) of 32 V, with a collector-base voltage (VCBO) of 60 V and an emitter-base voltage (VEBO) of 5 V. Key electrical characteristics include a collector-emitter saturation voltage of 700 mV, a power dissipation rating of 225 mW, and a gain-bandwidth product (fT) of 100 MHz. The minimum DC current gain (hFE) is specified at 80. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix 'ALT1G' against official onsemi documentation to confirm pinout configuration and tape-and-reel specifications. Ensure the procurement channel provides valid RoHS compliance declarations. Cross-reference the manufacturer part number with authorized distributor databases to validate authenticity and traceability before finalizing orders.
Select this component when a small-signal NPN transistor with moderate current capacity is required in a compact SOT-23-3 footprint. Consider the 32 V VCEO rating for low-voltage applications. Verify that the 100 MHz transition frequency meets the bandwidth requirements of the target circuit design compared to alternative BJT families.
This component belongs to the BCW65AL series of small-signal transistors from onsemi. It serves as a standard discrete semiconductor solution for general electronic designs requiring NPN switching or amplification. The part is widely utilized in consumer electronics and industrial control systems where space-constrained surface-mount technology is preferred over through-hole alternatives.
Publicly confirmed substitute part numbers are not available in the provided source material.