BCW65CLT1

$0.05

Description：TRANS NPN 32V 0.8A SOT23-3
Series：-

SKU:95d7dbb97cbf Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS NPN 32V 0.8A SOT23-3
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：32 V
Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：20nA
DC Current Gain (hFE) (Min) @ Ic, Vce：250 @ 100mA, 1V
Power - Max：225 mW
Frequency - Transition：100MHz
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：SOT-23-3 (TO-236)
Grade：-
Qualification：-

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BCW65CLT1

Overview

The BCW65CLT1 is an NPN silicon general-purpose transistor housed in a SOT-23 (TO-236AB) package. It features a collector-emitter voltage of 32 Vdc, a continuous collector current of 800 mAdc, and a total device dissipation of 225 mW on an FR-5 board at 25°C. The component operates within a junction temperature range of -55 to +150 °C. Electrical characteristics include a DC current gain ranging from 80 to 630 at specified currents, a transition frequency of 100 MHz, and a turn-off time of 400 ns.

Feature Summary

High DC current gain suitable for amplification applications
Integrated thermal protection via defined junction-to-ambient resistance
Lead-free packaging available for environmental compliance

Applications

General-purpose switching circuits
Low-frequency amplification stages
Driver circuits for small loads

Procurement Notes

Verify the specific ordering suffix to confirm tape and reel specifications and lead-free status. Ensure the procurement documentation matches the exact part number variant required for the intended application. Cross-reference the manufacturer's latest datasheet revision to confirm all electrical parameters remain consistent with the design requirements before finalizing orders.

Selection Notes

Select this component when a high-gain NPN transistor is required in a compact surface-mount form factor. The BCW65CLT1 offers superior current gain compared to the BCW65ALT1 variant. Evaluate the thermal constraints of the PCB layout against the specified junction-to-ambient resistance values to ensure reliable operation under maximum load conditions.

Part Context

This component belongs to the BCW65 series of NPN silicon transistors manufactured by onsemi. It shares the same physical package and basic ratings as the BCW65ALT1 but is distinguished by its higher minimum DC current gain specifications. The series is designed for cost-effective general-purpose electronic applications requiring reliable switching and amplification performance.

Replacement Considerations

The BCW65ALT1 serves as a direct functional substitute within the same product family, differing primarily in the guaranteed DC current gain ranges. Verify that the lower gain specifications of the ALT1 variant meet the circuit requirements if used as a replacement.

FAQ

What is the difference between BCW65ALT1 and BCW65CLT1?

Both are NPN silicon transistors in SOT-23 packages with identical voltage and current ratings. The primary difference is the DC current gain; the BCW65CLT1 specifies a higher gain range (80 to 630) compared to the BCW65ALT1 (35 to 250).