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Product Detailed Parameters
- Description：TRANS NPN 45V 1A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：1:00 AM
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：350 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BCW66G is an NPN general-purpose amplifier transistor manufactured by ON Semiconductor. It operates with a collector-emitter voltage of 45 V and supports continuous collector currents up to 1 A. The device features a DC current gain ranging from 50 to 400, depending on the operating conditions. It utilizes a SOT-23 surface-mount package and maintains a junction temperature range from -55°C to +150°C.
Feature Summary
- Designed for general-purpose amplifier applications at collector currents up to 500mA
- High current capability with a maximum continuous collector current of 1A
- Low saturation voltage characteristics for efficient switching performance
Applications
- General-purpose amplification circuits
- Switching applications requiring high current handling
- Signal processing in consumer electronics
Procurement Notes
Verify the exact part number against the official ON Semiconductor database, as Fairchild Semiconductor integration may have updated nomenclature. Ensure compliance with RoHS standards and confirm the specific manufacturing revision matches your design requirements before finalizing procurement orders.
Selection Notes
Select this component for designs requiring robust NPN amplification with moderate voltage ratings. Consider the SOT-23 package constraints for thermal management and PCB space. Validate the DC current gain (hFE) ranges against your specific biasing requirements to ensure stable operation across the intended temperature spectrum.
Part Context
This component belongs to the family of small-signal NPN transistors produced by ON Semiconductor. It serves as a versatile discrete semiconductor device suitable for various electronic circuit implementations. The product line emphasizes reliability and standard packaging solutions for widespread industrial and commercial use.
Replacement Considerations
BCW68G
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (BVCEO) is 45 V.
What package type does the BCW66G utilize?
The device is housed in a SOT-23 surface-mount plastic package.
Is the BCW66G suitable for life support systems?
No, ON Semiconductor products are not designed, intended, or authorized for use as critical components in life support systems without express written approval.
