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Product Detailed Parameters
- Description：TRANS NPN 45V 0.8A SOT23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：20nA
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：300 mW
- Frequency - Transition：100MHz
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3 (TO-236)
- Grade：-
- Qualification：-
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Overview
The BCW66GLT1 is an NPN silicon general-purpose transistor manufactured by onsemi. It operates with a collector-emitter voltage of 45 Vdc and a continuous collector current of 800 mAdc. The device features a DC current gain ranging from 110 to 400 at specific test conditions. Thermal dissipation reaches 225 mW on an FR-5 board. It utilizes a SOT-23 package and supports junction temperatures between -55°C and +150°C.
Feature Summary
- NPN silicon construction for general-purpose switching and amplification
- High current capability up to 800 mA in a compact surface-mount package
- Low saturation voltage characteristics for efficient power handling
Applications
- General-purpose switching circuits
- Amplifier stages
- Automotive qualified applications
Procurement Notes
Verify the exact ordering suffix against official documentation, as variations may exist between tape and reel specifications or lead-free designations. Confirm that the component matches the required automotive qualification standards if intended for such environments. Ensure the datasheet revision aligns with the manufacturing batch requirements before finalizing procurement orders.
Selection Notes
Select this component when high current handling near 800 mA is required within a small SOT-23 footprint. Consider its low saturation voltage for improved efficiency in switching applications. Verify that the 45 V collector-emitter rating meets the circuit's maximum voltage stress requirements under all operating conditions.
Part Context
This part belongs to the BCW66 series of NPN general-purpose transistors. It is designed for use in low-voltage, high-speed switching applications. The series includes complementary PNP devices and variants with different gain ranges. It is suitable for automated assembly processes due to its surface-mount packaging.
Replacement Considerations
BCW66GVL
FAQ
What is the pin configuration for the BCW66GLT1?
Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector.
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage is 45 Vdc.
