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The BCW66HQTA is an NPN small-signal transistor from Diodes Incorporated, designed for high-reliability applications. It features a maximum collector-emitter voltage (Vceo) of 45V and a continuous collector current (Ic) of 800mA. The device operates within a junction temperature range of -65°C to 150°C and has a power dissipation rating of 330mW. It is qualified to AEC-Q101 standards and is supplied in a SOT-23 package.
Verify the specific suffix 'QTA' against official Diodes Incorporated documentation to confirm AEC-Q101 qualification and tape-and-reel packaging specifications. Ensure compatibility with required automotive grade standards before integration into final designs.
Select this component when an NPN transistor with 45V Vceo and 800mA Ic is required in a compact SOT-23 footprint. Consider its low saturation voltage for efficient switching performance in low-voltage applications.
This part belongs to the BCW66H series of NPN small-signal transistors. It is complemented by the BCW68H PNP counterpart. The series is characterized by high gain and low saturation voltage, suitable for general-purpose use in consumer and automotive electronics.
The BAW56HYFH is listed as a similar specification replacement in related documentation, though it differs in configuration and package. Verify electrical equivalence and pinout compatibility before substitution.