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Product Detailed Parameters
- Description：TRANS 32V 0.8A PG-SOT23-3-1
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA, 1V
- Power - Max：330 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23-3-1
- Grade：Automotive
- Qualification：AEC-Q101
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Overview
The BCW67AE6327 is a single NPN silicon general-purpose bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and operates within a temperature range of -65°C to +150°C. The device supports a maximum collector current of 800 mA and withstands a collector-emitter voltage of 32 V. Key electrical characteristics include a collector-base voltage of 45 V, an emitter-base voltage of 5 V, and a power dissipation rating of 330 mW. The component features a transition frequency of 200 MHz and a DC current gain ranging from 160 to 400.
Feature Summary
- Single NPN silicon construction for general-purpose switching and amplification
- Automotive-grade qualification compliant with AEC-Q100 standards
- High thermal stability supporting operation up to 150°C
Applications
- General-purpose signal amplification circuits
- Low-power switching applications
- Automotive electronic systems requiring AEC-Q100 compliance
Procurement Notes
Verify the specific suffix E6327 against official Infineon documentation to confirm tape-and-reel packaging details. Confirm current lifecycle status as end-of-life or obsolescence notices may apply. Ensure compatibility with standard SMD/SMT assembly processes for the SOT-23-3 footprint before procurement.
Selection Notes
Select this component for designs requiring a robust NPN transistor with automotive reliability ratings. The 800 mA continuous collector current and 32 V breakdown voltage suit moderate power handling needs. Verify that the 330 mW power dissipation limit aligns with the thermal management strategy of the target application environment.
Part Context
This part belongs to the BCW67 series of general-purpose transistors from Infineon Technologies. The series offers various configurations optimized for different voltage and current requirements. The BCW67AE6327 specifically provides NPN polarity with standardized SOT-23-3 packaging for compact board layouts.
Replacement Considerations
Consult official Infineon cross-reference guides for verified substitutes. Generic equivalents may not match the AEC-Q100 qualification or exact pinout specifications.
