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Product Detailed Parameters
- Description：TRANS PNP 32V 0.8A PG-SOT23
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Bulk
- Transistor Type：PNP
- Current - Collector (Ic) (Max)：800 mA
- Voltage - Collector Emitter Breakdown (Max)：32 V
- Vce Saturation (Max) @ Ib, Ic：700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：20nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：160 @ 100mA, 1V
- Power - Max：330 mW
- Frequency - Transition：200MHz
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：PG-SOT23
- Grade：-
- Qualification：-
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Overview
The BCW67BE6327HTSA1 is a PNP silicon small-signal bipolar junction transistor manufactured by Infineon Technologies. It is housed in an SOT-23-3 surface-mount package and operates within a temperature range of -65°C to +150°C. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 32 V, a collector-base voltage (VCBO) of 45 V, and an emitter-base voltage (VEBO) of 5 V. The device supports a continuous collector current of 800 mA with a peak rating of 1 A. Power dissipation is rated at 330 mW, while the DC current gain (hFE) ranges from 160 to 400. The transition frequency (fT) is 200 MHz, and the collector-emitter saturation voltage is 300 mV.
Feature Summary
- PNP silicon construction for general-purpose amplification
- High current handling capability up to 800 mA
- Wide operating temperature range suitable for harsh environments
Applications
- General-purpose signal amplification circuits
- Switching applications in low-voltage systems
- Audio pre-amplifier stages
Procurement Notes
Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance details via official datasheets. Check for alternative sourcing options as availability may be limited. Ensure storage conditions meet manufacturer specifications to prevent degradation.
Selection Notes
Select this component for designs requiring PNP topology with moderate current drive. Compare hFE ranges against circuit requirements for consistent gain. Verify thermal management capabilities given the 330 mW dissipation limit in the SOT-23-3 package.
Part Context
This part belongs to the BCW67 series of PNP transistors. It shares the SOT-23-3 form factor common across many small-signal BJT families. The suffix indicates specific binning or packaging variations defined by Infineon.
Replacement Considerations
BCW66KHE6327HTSA1 (NPN counterpart)
FAQ
What is the maximum collector-emitter voltage?
The maximum collector-emitter voltage (VCEO) is 32 V.
Is this component automotive qualified?
The provided documentation does not list AEC-Q100 qualification for this specific part number.
What is the transition frequency?
The gain-bandwidth product (fT) is 200 MHz.
