BCW68FE6327HTSA1

BCW68FE6327HTSA1

$0.03
  • Description:TRANS PNP 45V 0.8A PG-SOT23
  • Series:-

SKU:c170d17a58c9 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 0.8A PG-SOT23
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):20nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 1V
  • Power - Max:330 mW
  • Frequency - Transition:200MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

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BCW68FE6327HTSA1

Overview

The BCW68FE6327HTSA1 is a single PNP silicon bipolar junction transistor (BJT) from Infineon Technologies, housed in an SOT-23-3 surface-mount package. It supports a maximum collector current of 1 A with a continuous rating of 800 mA. Key electrical limits include a collector-emitter voltage (VCEO) of 45 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 5 V. The device features a power dissipation capacity of 330 mW, a transition frequency (fT) of 200 MHz, and a DC current gain (hFE) ranging from 100 to 250. It operates within a temperature range of -65°C to +150°C.

Feature Summary

  • PNP silicon construction for audio frequency applications
  • High current handling capability up to 1 A
  • Wide operating temperature range suitable for harsh environments

Applications

  • Audio frequency amplification circuits
  • General-purpose switching applications
  • Driver stages in electronic systems

Procurement Notes

Verify the component status before procurement as the BCW68FE6327HTSA1 is listed as obsolete or end-of-life by the manufacturer. Confirm availability through authorized distributors or secondary markets. Ensure that any substitute components meet the required electrical specifications and pin compatibility. Check for RoHS compliance documentation if required for specific regulatory standards. Validate the authenticity of the source to avoid counterfeit parts.

Selection Notes

Select this component for designs requiring a robust PNP transistor with high current capacity in a compact SOT-23-3 package. Consider the 45 V VCEO rating for low-voltage switching tasks. The 200 MHz transition frequency makes it suitable for audio frequencies but not high-speed RF applications. Evaluate the thermal management requirements given the 330 mW power dissipation limit. Compare against other BCW68 variants if different gain ranges or voltage ratings are needed.

Part Context

This part belongs to the BCW68 series of PNP silicon transistors designed for general-purpose and audio frequency applications. The suffix E6327 indicates a specific tape and reel packaging configuration. The HTSA1 suffix typically denotes automotive-grade qualification or specific manufacturing lot codes, though official confirmation of AEC-Q100 certification is not explicitly stated for this exact variant in the provided data compared to the BCW68H counterpart.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided data. Consult Infineon's official replacement guide or datasheet cross-reference section for verified alternatives.

BCW68FE6327HTSA1BCW68FE6327HTSA1
$0.03
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