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The BCW68GLT1 is a PNP silicon general-purpose transistor manufactured by onsemi. It operates with a collector-emitter voltage of -45 Vdc and a continuous collector current of -800 mAdc. The device features a DC current gain ranging from 60 to 400 depending on the operating point, with a maximum junction temperature of +150 °C. Packaged in an SOT-23 (CASE 318) housing, it supports surface-mount installation. Electrical characteristics include a collector-base breakdown voltage of -60 Vdc and an emitter-base breakdown voltage of -5.0 Vdc.
Verify the ordering suffix matches the required packaging quantity and tape-and-reel specifications. Confirm that the NSV prefix aligns with your project's specific automotive or industrial sourcing mandates. Ensure the component meets all applicable environmental compliance standards relevant to your region before finalizing procurement orders.
Select this component when a PNP small-signal transistor with high current gain and robust thermal performance is required. The SOT-23 package suits space-constrained designs. Consider the AEC-Q101 qualification if the application involves automotive environments. Verify that the -45 V collector-emitter rating fits the circuit's voltage requirements.
This part belongs to the BCW68 series of PNP silicon transistors designed for general-purpose use. The GL variant specifies the particular binning for current gain characteristics. Manufactured by onsemi, it utilizes standard semiconductor processes suitable for mass production in consumer, industrial, and automotive sectors.
Consult official cross-reference lists for verified substitutes. Ensure any replacement maintains the same pinout configuration and electrical ratings. Verify compatibility with existing PCB footprints and thermal management strategies.