BCW68GLT3G

BCW68GLT3G

$0.14
  • Description:TRANS PNP 45V 0.8A SOT23-3
  • Series:-

SKU:46251a635792 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PNP 45V 0.8A SOT23-3
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):800 mA
  • Voltage - Collector Emitter Breakdown (Max):45 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 30mA, 300mA
  • Current - Collector Cutoff (Max):20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 10mA, 1V
  • Power - Max:225 mW
  • Frequency - Transition:100MHz
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23-3 (TO-236)
  • Grade:-
  • Qualification:-

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BCW68GLT3G

Overview

The BCW68GLT3G is a PNP silicon small-signal transistor manufactured by onsemi in an SOT-23 package. It features a collector-emitter voltage rating of -45 Vdc and a continuous collector current capability of -800 mAdc. The device provides a DC current gain ranging from 60 to 400 depending on the operating point, with a maximum collector-base breakdown voltage of -60 Vdc. Thermal characteristics include a junction-to-ambient resistance of 556 °C/W on an FR-5 board and a total power dissipation of 225 mW at 25°C ambient temperature.

Feature Summary

  • AEC-Q101 qualified for automotive applications requiring unique site and control change requirements
  • Lead-free, halogen-free, and brominated flame retardant-free construction compliant with RoHS standards
  • Designed for general-purpose switching and amplification tasks

Applications

  • General-purpose switching circuits
  • Low-frequency or audio amplification stages
  • Automotive electronic systems requiring AEC-Q101 compliance

Procurement Notes

Verify that the ordering suffix T3G corresponds to the specific tape and reel packaging configuration required for automated assembly processes. Confirm that the NSV prefix is present if the application demands adherence to specific automotive site and control change protocols as defined by the manufacturer's quality standards.

Selection Notes

Select this component when a PNP transistor with moderate current handling and high voltage ratings is needed in a compact surface-mount footprint. Ensure the design accounts for the thermal resistance limits under expected ambient conditions. Validate that the required DC current gain falls within the specified minimums for the target collector current levels.

Part Context

This device belongs to the BCW68GL family of general-purpose PNP transistors produced by onsemi. It utilizes a standard SOT-23 (CASE 318) outline, providing a compact solution for space-constrained designs. The product line emphasizes compliance with environmental directives and automotive reliability standards.

Replacement Considerations

Consult official cross-reference documentation to identify equivalent parts. Verify pinout compatibility and electrical parameter alignment before substitution.

FAQ

What is the maximum collector-emitter breakdown voltage?

The maximum collector-emitter breakdown voltage is -45 Vdc.

Is this component suitable for automotive applications?

Yes, devices with the NSV prefix are AEC-Q101 qualified and PPAP capable for automotive use.

What is the typical output capacitance?

The maximum output capacitance is 18 pF under specified test conditions.

BCW68GLT3GBCW68GLT3G
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