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The BCW68GLT3G is a PNP silicon small-signal transistor manufactured by onsemi in an SOT-23 package. It features a collector-emitter voltage rating of -45 Vdc and a continuous collector current capability of -800 mAdc. The device provides a DC current gain ranging from 60 to 400 depending on the operating point, with a maximum collector-base breakdown voltage of -60 Vdc. Thermal characteristics include a junction-to-ambient resistance of 556 °C/W on an FR-5 board and a total power dissipation of 225 mW at 25°C ambient temperature.
Verify that the ordering suffix T3G corresponds to the specific tape and reel packaging configuration required for automated assembly processes. Confirm that the NSV prefix is present if the application demands adherence to specific automotive site and control change protocols as defined by the manufacturer's quality standards.
Select this component when a PNP transistor with moderate current handling and high voltage ratings is needed in a compact surface-mount footprint. Ensure the design accounts for the thermal resistance limits under expected ambient conditions. Validate that the required DC current gain falls within the specified minimums for the target collector current levels.
This device belongs to the BCW68GL family of general-purpose PNP transistors produced by onsemi. It utilizes a standard SOT-23 (CASE 318) outline, providing a compact solution for space-constrained designs. The product line emphasizes compliance with environmental directives and automotive reliability standards.
Consult official cross-reference documentation to identify equivalent parts. Verify pinout compatibility and electrical parameter alignment before substitution.
The maximum collector-emitter breakdown voltage is -45 Vdc.
Yes, devices with the NSV prefix are AEC-Q101 qualified and PPAP capable for automotive use.
The maximum output capacitance is 18 pF under specified test conditions.