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The BCW70LT1 is a PNP silicon general-purpose transistor manufactured by onsemi. It operates with a collector-emitter voltage of -45 Vdc and an emitter-base voltage of -5.0 Vdc. The device supports a continuous collector current of -100 mAdc. Total device dissipation reaches 225 mW on an FR-5 board at 25°C, derating by 1.8 mW/°C above this temperature. Junction and storage temperatures range from -55 to +150 °C. The component utilizes a SOT-23 (TO-236AB) package.
Verify the specific ordering suffix against official documentation to confirm lead-free status and packaging configuration. Ensure the procurement channel sources directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm that the delivered components match the specified SOT-23 package dimensions and marking codes before integration into production lines.
Select this component when a PNP transistor with low noise performance is required for general-purpose tasks. Evaluate the thermal resistance and power dissipation limits relative to the operating environment. Compare the DC current gain specifications against circuit requirements to ensure adequate amplification or switching capability without exceeding maximum ratings.
This component belongs to the general-purpose transistor category within onsemi's discrete semiconductor portfolio. It is designed for use in consumer electronics and industrial control systems where reliable switching and amplification are necessary. The SOT-23 package allows for compact surface-mount assembly, facilitating space-constrained PCB designs.
BCW70LT1G