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Product Detailed Parameters
- Description：TRANS NPN 45V 0.1A SST3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：110 @ 2mA, 5V
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SST3
- Grade：-
- Qualification：-
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Overview
The BCW71T116 is a general-purpose amplification transistor manufactured by Rohm Semiconductor. It is an NPN silicon epitaxial planar transistor housed in the SST3 (SOT-23) surface-mount package. The device features a collector-emitter voltage of 50V and a collector current of 0.1A, with a maximum power dissipation of 200mW. It offers a DC current gain (hFE) range of 200 to 450 at a collector current of 2mA. Designed for low-voltage applications, it operates within a storage temperature range of -55°C to 150°C.
Feature Summary
- NPN polarity configuration suitable for general-purpose amplification
- Surface-mount SST3 package design for compact circuit integration
- High DC current gain characteristics for signal processing
- Low power dissipation rating optimized for portable electronics
Applications
- General-purpose amplification circuits
- Switching applications in consumer electronics
- Signal processing stages in low-voltage systems
Procurement Notes
Verify the specific ordering suffix T116 to confirm the tape-and-reel packaging format containing 3000 units per reel. Ensure compatibility with standard SOT-23 footprint layouts during PCB design. Confirm RoHS compliance status for environmental regulations. Check current supply status as availability may vary based on production cycles. Validate that the component meets the required hFE binning specifications for your specific circuit design needs.
Selection Notes
Select this component when an NPN transistor with moderate voltage handling and low current capacity is required. Compare hFE ranges against circuit biasing requirements to ensure adequate gain. Consider the thermal performance given the 200mW dissipation limit in enclosed spaces. Evaluate the SOT-23 package size constraints relative to available board real estate. Verify that the 50V breakdown voltage exceeds the maximum operating voltage in the application.
Part Context
This part belongs to Rohm's family of general-purpose bipolar junction transistors designed for amplification and switching. It complements other devices in the series such as the BCW62 or BCW63, offering similar functionality in a standardized surface-mount form factor. The product line emphasizes energy efficiency and reliability for mass-produced electronic devices.
Replacement Considerations
Direct substitutes include the BC847B and BC848B from various manufacturers, which share identical pinouts and package dimensions. Verify that replacement parts meet the same electrical specifications for Vceo, Ic, and hFE ranges. Ensure the alternative components are available in the T116 tape-and-reel format if automated assembly is used.
