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The BCX 54-16 E6327 is an NPN silicon audio frequency transistor designed for driver and output stages. It operates within a collector-emitter voltage range of up to 45 V and supports a continuous DC collector current of 1 A. The device features a minimum transition frequency of 100 MHz and maintains a low collector-emitter saturation voltage of 0.5 V at 500 mA. It utilizes the SOT-89 surface-mount package, ensuring efficient thermal management with a junction-to-soldering point thermal resistance of 20 K/W.
Verify the specific suffix -16 indicates the hFE grouping (100 to 160) when sourcing components. Confirm the manufacturer designation matches Infineon Technologies specifications. Ensure the SOT-89 package type aligns with board layout requirements. Cross-reference the part number against official datasheets to validate electrical characteristics before integration into production designs.
Select this component for applications requiring high collector current and low saturation voltage in audio frequency environments. Compare the hFE grouping requirements against circuit gain needs. Evaluate thermal performance based on the specified junction-to-soldering point resistance. Consider complementary PNP types for push-pull configurations if necessary.
This transistor belongs to the BCX54...BCX56 series of NPN silicon AF transistors. It is part of a family offering various breakdown voltages and current gains. Complementary PNP types are available within the same series for balanced circuit design. The series is optimized for audio applications requiring reliable performance under varying load conditions.
Complementary PNP types include BCX51, BCX52, and BCX53. Direct replacements must match the SOT-89 package and electrical ratings. Verify hFE group compatibility for equivalent gain performance. Consult official substitution guides for cross-referencing parameters.
The maximum collector-emitter voltage (VCEO) is 45 V.
The -16 suffix denotes the DC current gain (hFE) grouping, which ranges from 100 to 160 at IC = 150 mA and VCE = 2 V.
The transition frequency (fT) is typically 100 MHz at IC = 50 mA and VCE = 10 V.