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The BCX18LT1G is a general-purpose PNP bipolar junction transistor manufactured by onsemi. It operates with a collector-emitter voltage of 25 Vdc and a continuous collector current of 500 mAdc. The device features a DC current gain ranging from 40 to 600 depending on the collector current level. Thermal dissipation reaches 225 mW on an FR-5 board at 25°C ambient temperature. It is housed in a SOT-23 package.
Verify the specific ordering prefix, as devices prefixed with S or NSV are designated for automotive applications and require AEC-Q101 qualification and PPAP capability. Confirm that the standard BCX18LT1G variant does not carry these specific automotive compliance requirements unless explicitly stated in the purchase order documentation.
Select this component for low-power general-purpose applications requiring a PNP configuration within a compact surface-mount footprint. Ensure the circuit design accommodates the 25 V collector-emitter voltage limit and verify thermal management strategies for the 225 mW power dissipation rating on standard FR-5 substrates.
This part belongs to the BCX17/BCX18/BCX19 series of general-purpose transistors. While sharing the same SOT-23 package and thermal characteristics, it differs from the BCX17 and BCX19 variants primarily in its maximum voltage ratings, which are lower than those of the other members in the family.
BCX17LT1G (PNP, 45V), BCX19LT1G (NPN, 45V)
The maximum collector-emitter voltage (VCEO) is 25 Vdc.
The minimum DC current gain decreases as collector current increases: 100 at 100 mA, 70 at 300 mA, and 40 at 500 mA.
The device is marked with the code T2 on the package.