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Product Detailed Parameters
- Description：TRANS NPN 45V 0.5A SOT-23-3
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Current - Collector (Ic) (Max)：500 mA
- Voltage - Collector Emitter Breakdown (Max)：45 V
- Vce Saturation (Max) @ Ib, Ic：620mV @ 50mA, 500mA
- Current - Collector Cutoff (Max)：100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce：100 @ 100mA, 1V
- Power - Max：300 mW
- Frequency - Transition：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：SOT-23-3
- Grade：-
- Qualification：-
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Overview
The BCX19 is an NPN medium power transistor manufactured by onsemi, housed in a SOT-23 surface-mount package. It features a collector-emitter voltage (VCEO) of 45 V and a continuous collector current rating of 500 mA. The device supports a total power dissipation of 300 mW at 25°C with a thermal resistance of 417 °C/W. Operating junction temperatures range from -55°C to +150°C. Key electrical characteristics include a DC current gain (hFE) ranging from 40 to 600 depending on the collector current level, a collector-emitter saturation voltage of 0.62 V at 500 mA, and a base-emitter on voltage of 1.2 V.
Feature Summary
- Designed for general-purpose amplifier applications
- Utilizes process 38 technology for performance
- Single NPN configuration in compact SOT-23 package
Applications
- General purpose amplifiers
Procurement Notes
Verify the exact part number suffix against the official onsemi ordering information page, as legacy Fairchild nomenclature may differ due to system integration requirements. Confirm RoHS compliance status and specific tape-and-reel packaging details directly with authorized distributors or the manufacturer before finalizing procurement specifications.
Selection Notes
Select this component when a single NPN transistor with moderate current handling capabilities is required for signal amplification tasks. Ensure the application circuit design accounts for the specified thermal resistance and power dissipation limits to maintain safe operating junction temperatures within the defined range during continuous operation.
Part Context
This component belongs to the BCX series of bipolar junction transistors produced by onsemi. Originally developed under Fairchild Semiconductor, it is now managed within the onsemi portfolio following corporate integration. The device serves as a standard discrete solution for low-to-medium power electronic circuits requiring reliable switching or linear amplification characteristics.
Replacement Considerations
Consult the official onsemi cross-reference documentation for verified substitute part numbers. Do not assume functional equivalence based solely on package type or generic specifications without verifying absolute maximum ratings and electrical parameters against the original datasheet.
FAQ
What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 45 V.
What is the DC current gain range?
The DC current gain (hFE) ranges from 40 to 600, varying based on the specific collector current test condition.
Is this device suitable for life support systems?
No, ON Semiconductor products are not designed, intended, or authorized for use as critical components in life support systems.
