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The BCX19LT1G is an NPN silicon bipolar junction transistor manufactured by onsemi, housed in a compact SOT-23 surface-mount package. It supports a maximum DC collector current of 500 mA and offers a collector-emitter voltage rating of 45 V. The device features a collector-base voltage of 50 V and an emitter-base voltage of 5 V. Power dissipation is rated at 225 mW to 300 mW depending on specific conditions, with a collector-emitter saturation voltage of 620 mV. It operates within a temperature range of -55 °C to +150 °C.
Verify the exact suffix (e.g., LT1G) when ordering, as it indicates specific tape-and-reel packaging and RoHS compliance. Confirm that the required voltage and current ratings align with the 45 V VCEO and 500 mA IC limits. Ensure the SOT-23 footprint matches the target board layout. Check for lead-free status if environmental regulations apply to the final assembly.
Select this component for designs requiring a small-form-factor NPN transistor with moderate voltage handling. The 45 V rating suits low-voltage logic interfaces. Consider the 225–300 mW power dissipation limit for thermal management in dense layouts. Compare against other SOT-23 BJT options if higher current or different voltage thresholds are needed.
This part belongs to the BCX19L series of general-purpose NPN transistors from onsemi. It is designed for use in consumer electronics and industrial control systems where space efficiency is critical. The device complements other discrete semiconductors in signal conditioning and power management modules.
Public confirmed substitute part numbers: BCX19T116 (ROHM Semiconductor). Verify pinout compatibility and electrical parameter equivalence before substitution.