BCX23 TIN/LEAD

Overview

The BCX23 TIN/LEAD is a PNP bipolar junction transistor manufactured by Central Semiconductor Corp. It features a through-hole TO-18 package and supports tin/lead plating as indicated by the suffix. The device operates with a maximum collector-emitter voltage of 125 V and a continuous collector current of 800 mA. Key electrical characteristics include a gain bandwidth product of 50 MHz, an emitter-base voltage of 5 V, and a collector-emitter saturation voltage of 900 mV. Power dissipation is rated at 500 mW. The component functions within a temperature range from -65°C to +200°C.

Feature Summary

• High voltage capability with 125 V collector-emitter rating
• Robust current handling up to 800 mA continuous collector current
• Wide operating temperature range extending to +200°C
• Traditional through-hole TO-18 packaging for reliable mounting

Applications

• General purpose switching circuits
• Linear amplifier stages
• Power regulation modules
• Signal processing interfaces

Procurement Notes

Verify the specific ordering suffix requirements when requesting tin/lead plated devices, as documentation indicates adding 'TIN/LEAD' to the part number is necessary for this configuration. Confirm RoHS status details directly with the manufacturer or authorized distributors, as compliance information may vary based on the specific production batch and requested plating type. Ensure the procurement channel provides valid traceability for the Central Semiconductor brand.

Selection Notes

Select the BCX23 TIN/LEAD for applications requiring high voltage tolerance and moderate current capacity in a standard through-hole form factor. The 50 MHz gain bandwidth product makes it suitable for frequency-sensitive signal processing tasks. Consider the wide thermal operating range when designing for extreme environmental conditions. The TO-18 package offers mechanical stability for industrial or aerospace environments where robust physical connection is required.

Part Context

The BCX23 belongs to the family of PNP bipolar junction transistors produced by Central Semiconductor Corp. This series is characterized by silicon construction and is designed for general-purpose electronic applications. The component represents a legacy through-hole technology option, contrasting with modern surface-mount alternatives like the BCW61CTR13. It serves as a discrete semiconductor solution for analog and digital circuit designs requiring reliable PNP switching or amplification capabilities.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material. When evaluating replacements, ensure the alternative device matches the 125 V collector-emitter voltage, 800 mA current rating, and TO-18 package dimensions. Verify that any substitute maintains compatibility with the required 50 MHz gain bandwidth and operates within the specified -65°C to +200°C temperature range.