BCX38C TIN/LEAD

$0.17

Description：800MA 60V TH TRANSISTOR-SMALL SI
Series：-

SKU:0c906f4a7563 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

Product Detailed Parameters

Description：800MA 60V TH TRANSISTOR-SMALL SI
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN - Darlington
Current - Collector (Ic) (Max)：800 mA
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：-
Current - Collector Cutoff (Max)：-
DC Current Gain (hFE) (Min) @ Ic, Vce：10000 @ 500mA, 5V
Power - Max：1 W
Frequency - Transition：-
Operating Temperature：-55°C ~ 200°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

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BCX38C TIN/LEAD

Overview

The BCX38C TIN/LEAD is an NPN Darlington transistor manufactured by Central Semiconductor Corp. It features a collector-emitter voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 80 V, and an emitter-base voltage (VEBO) of 10 V. The device supports a maximum continuous collector current of 800 mA with a power dissipation rating of 1 W. It utilizes a TO-92-3 through-hole package and operates within a temperature range of -55°C to +150°C.

Feature Summary

High DC current gain configuration suitable for amplification applications
Robust thermal performance with 1 W power dissipation capability
Standardized TO-92-3 through-hole mounting format

Applications

General-purpose switching circuits
Low-frequency amplification stages
Driver circuits for relays or lamps

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm lead composition and compliance status. Ensure the ordering code matches the required RoHS or tin/lead specifications exactly. Cross-reference the datasheet revision date to validate electrical parameters before finalizing procurement decisions.

Selection Notes

Select this component when high current gain is required in a compact through-hole package. Evaluate the 60 V collector-emitter voltage limit against circuit operating conditions. Confirm that the 800 mA collector current capacity meets load requirements without exceeding the 1 W power dissipation limit under expected thermal conditions.

Part Context

This part belongs to the BCX38 series of NPN Darlington transistors produced by Central Semiconductor. The series offers variations in voltage ratings and packaging options while maintaining consistent functional characteristics. The BCX38C variant specifically targets applications requiring moderate voltage handling and significant current drive capabilities in standard through-hole configurations.