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The BCX41E6327HTSA1 is an NPN bipolar junction transistor manufactured by Infineon Technologies, housed in a surface-mount SOT-23 package. It features a maximum DC collector current of 800 mA and a maximum collector-emitter voltage (VCEO) of 125 V. The device supports a maximum operating frequency of 100 MHz and has a power dissipation rating of 330 mW. Key electrical limits include a collector-base voltage of 125 V and an emitter-base voltage of 5 V. It operates within a temperature range up to +150°C and contains a single chip element.
Verify the specific suffix HTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SOT-23 footprint dimensions during PCB layout. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before integration into regulated products.
Select this component when a high-voltage NPN transistor is required in a small outline package. The 125 V rating distinguishes it from lower-voltage alternatives like the BCY series. Consider the 800 mA current limit for load requirements. The SOT-23 form factor suits automated assembly processes where board real estate is limited compared to larger through-hole packages.
This part belongs to Infineon's discrete semiconductor portfolio, specifically within the general-purpose NPN transistor category. It utilizes standard silicon planar technology optimized for reliable performance in consumer and industrial electronics. The E6327HTSA1 suffix indicates specific manufacturing lot and packaging details defined by Infineon's internal coding standards.
Consult official cross-reference guides for equivalent parts such as the BCX41 from other manufacturers. Verify pinout compatibility and thermal characteristics before substitution. Ensure replacement devices meet or exceed the 125 V VCEO and 800 mA Ic specifications.