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The BCX51-10,115 is a PNP medium power transistor manufactured by Nexperia USA Inc. It operates with a collector-emitter voltage of -45 V and a continuous collector current of -1 A. The device features a peak collector current capability of -2 A for single pulses up to 1 ms. It utilizes an SOT89 (SC-62) surface-mounted package with three leads. The component is qualified under the AEC-Q101 standard for automotive applications. DC current gain selection -10 specifies a minimum hFE of 63 at -150 mA and -2 V.
Verify the specific ordering suffix matches the required tape and reel configuration. Confirm that the selected current gain bin aligns with circuit design requirements. Ensure compliance with RoHS directives and REACH regulations before integration. Check the most recent datasheet revision for any updates to limiting values or thermal characteristics prior to finalizing the bill of materials.
Select this component when a PNP transistor with high current handling and robust thermal performance is required. The exposed collector pad facilitates efficient heat dissipation on FR4 printed-circuit boards. Consider the specific hFE selection code to ensure proper biasing conditions are met. Verify that the operating temperature range fits within the specified junction and ambient limits.
This part belongs to the BCX51 series of PNP medium power transistors. It serves as the complement to the NPN BCX54 series. The device is designed for surface-mount assembly using reflow soldering methods. It shares common electrical characteristics with other variants in the BCP51 and BC51PA families, differing primarily in package type and pinout configuration.
BCX54-10,115
The maximum peak collector current is -2 A for single pulses with a duration of 1 ms or less.
The SOT89 package includes an exposed heatsink pad connected to the collector, which provides excellent thermal and electrical conductivity to the printed-circuit board.
Yes, the BCX51-10,115 is qualified in accordance with the AEC-Q101 stress test qualification standard for discrete semiconductors.