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The BCX51-10F is a PNP medium power transistor from the BCX51 series, manufactured by Nexperia USA Inc. It operates with a collector-emitter voltage of -45 V and a continuous collector current of -1 A. The device features an hFE selection of -10, providing a DC current gain range of 63 to 160 at -150 mA and -2 V. Packaged in SOT89 (SC-62), it includes an exposed heatsink for thermal management. The component is qualified under AEC-Q101 standards for automotive applications.
Verify the specific ordering suffix matches the required gain bin (-10) and packaging format. Confirm the package type corresponds to SOT89 with the correct pinout configuration. Ensure compliance with RoHS directives and REACH regulations for the intended market. Check the most recent datasheet revision for any updates to limiting values or thermal characteristics before finalizing the design.
Select this component when a PNP transistor with high current handling and moderate voltage ratings is required. The -10 gain bin suits applications needing a predictable gain range between 63 and 160. Consider the SOT89 package for its balance of power dissipation and board space. Verify thermal resistance requirements against the PCB copper area available for heat sinking.
This part belongs to the BCX51 series of PNP medium power transistors. It serves as the complement to the BCX54 NPN series. The series offers multiple packages including SOT223 and SOT1061. The BCX51-10 variant specifically denotes the lower gain bin compared to the -16 version.
BCX51-16T
The BCX51-10F has an hFE selection of -10, which provides a DC current gain range of 63 to 160 when measured at IC = -150 mA and VCE = -2 V.
Yes, the BCX51 series is qualified in accordance with the AEC-Q101 standard for discrete semiconductors, making it suitable for automotive electronics.
The maximum collector-emitter voltage (VCEO) with the base open is -45 V.