BCX5116E6327HTSA1

Overview

The BCX5116E6327HTSA1 is a single PNP bipolar junction transistor manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a surface-mount SOT-89 package with four pins (three electrical terminals plus a tab). The device supports a maximum collector current of 1 A and operates with a collector-emitter voltage rating of 45 V. Key electrical specifications include a transition frequency of 125 MHz and a power dissipation capacity of 2 W.

Feature Summary

• Single PNP bipolar junction transistor configuration
• High current handling capability up to 1 A
• Surface-mount SOT-89 package design

Applications

• General-purpose switching applications
• Amplifier circuits
• Industrial electronics systems

Procurement Notes

Verify the specific datasheet for the BCX5116E6327HTSA1 to confirm detailed electrical characteristics and thermal parameters before integration. Ensure that the SOT-89 package dimensions align with the target PCB footprint requirements. Confirm compliance with relevant environmental standards such as RoHS if applicable to the final product assembly.

Selection Notes

Select this component when a PNP transistor with 1 A continuous collector current and 45 V breakdown voltage is required. The SOT-89 package offers a compact solution suitable for space-constrained designs. Consider the 125 MHz transition frequency for high-speed switching or amplification needs within the specified voltage and current limits.

Part Context

This part belongs to the discrete semiconductor category, specifically within the bipolar transistor family. It is designed for general electronic and industrial applications requiring reliable switching and amplification performance. The manufacturer provides technical documentation to support circuit design and implementation.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.