SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX51E6327HTSA1 is a PNP silicon bipolar junction transistor manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 45 V and a continuous collector current rating of 1 A. The device is housed in a SOT-89 surface-mount package, suitable for automated assembly processes. Key electrical specifications include a DC current gain (hFE) ranging from 100 to 400 under standard test conditions. The component supports a maximum power dissipation of 1.25 W and operates within a temperature range of -55°C to +150°C.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging and tape-and-reel specifications. Ensure compatibility with existing PCB footprints designed for the SOT-89 outline. Confirm end-of-life status if long-term supply continuity is required for production runs.
Select this component when a high-current PNP transistor is needed in a compact surface-mount form factor. Compare hFE ranges and saturation voltages against circuit requirements. Consider thermal management needs due to the 1.25 W power dissipation rating in enclosed designs.
This part belongs to the BCX51 series of general-purpose PNP transistors. It complements NPN counterparts like the BCX52 for push-pull configurations. The series is designed for cost-effective solutions in audio and power management applications requiring moderate voltage ratings.
The maximum power dissipation is 1.25 W.
It uses the SOT-89 surface-mount package.