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The BCX51TF is a PNP power bipolar junction transistor manufactured by Nexperia. It operates with a maximum collector-emitter voltage of 45 V and supports a continuous collector current of 1 A. The device features a gain-bandwidth product of 140 MHz and a power dissipation rating of 500 mW. It utilizes an SOT-89-3 surface-mount package. The component functions within a temperature range from -55 °C to +150 °C, with a DC current gain minimum of 63 at specified test conditions.
Verify the specific suffix against official Nexperia documentation to confirm exact binning or packaging variations. Confirm RoHS compliance status and moisture sensitivity level requirements prior to integration. Ensure the ordering part number matches the required gain group and package type defined in the datasheet.
Select this component for applications requiring high current handling in a compact SMD form factor. Consider the 45 V breakdown voltage and 1 A current limit when designing load paths. Verify thermal management capabilities given the 500 mW dissipation rating in the SOT-89 package.
This device belongs to the BCX51T series of PNP power transistors. It serves as the PNP complement to the BCX54T NPN counterpart within the same family. The series is designed for general-purpose power switching and amplification tasks in modern electronic systems.
BCX51-10TF
Yes, the BCX51T series is AEC-Q101 qualified.
The BCX54T is the NPN complement to the BCX51T series.