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The BCX52-10,115 is a PNP medium power transistor manufactured by Nexperia in the SOT89 surface-mounted device plastic package. It features a collector-emitter voltage of -60 V and a continuous collector current rating of -1 A. The device supports a peak collector current of -2 A for single pulses up to 1 ms. DC current gain (hFE) selection -10 specifies a range of 63 to 160 at a collector current of -150 mA and VCE of -2 V. Total power dissipation reaches 0.50 W in free air and increases with PCB copper area. The junction temperature maximum is 150 °C.
Verify the specific ordering suffix matches the required tape and reel configuration. Confirm the hFE binning corresponds to design requirements. Check RoHS compliance status against latest datasheet revisions. Ensure packaging quantity aligns with production needs. Validate component authenticity through authorized distribution channels.
Select this component for designs requiring high current handling in a compact SMD form factor. The exposed pad facilitates efficient heat transfer to the PCB. Consider the specific hFE selection band to ensure adequate gain for the intended circuit application. Evaluate thermal resistance values based on the final PCB layout and copper area constraints.
This part belongs to the BCX52 series of PNP medium power transistors. It shares specifications with BCP52 and BC52PA variants but differs in package type. The SOT89 package provides a balance between power handling and board space efficiency compared to larger through-hole options.
BCX55-10,115 is the NPN complement within the same family. Verify pinout compatibility if substituting with other PNP transistors from different manufacturers. Ensure voltage and current ratings meet or exceed original design limits.