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The BCX5216E6327HTSA1 is a PNP silicon audio frequency transistor from the BCX52 series, manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 60 V and a continuous collector current rating of 1 A. The device utilizes an SOT89 surface-mount package with three pins. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at IC = 5 mA and up to 250 at IC = 500 mA. It operates within a junction temperature range of -65 °C to 150 °C and has a total power dissipation capability of 2 W.
Verify the specific suffix E6327HTSA1 against official Infineon documentation to confirm packaging details and RoHS compliance status. Ensure the component meets AEC-Q101 requirements if used in automotive applications. Cross-reference the datasheet revision date to validate thermal resistance parameters and maximum ratings before finalizing procurement specifications.
Select this component when a PNP transistor with 60 V collector-emitter voltage and 1 A continuous current capacity is required. It serves as the complementary type to the NPN BCX54...BCX56 series. Consider the SOT89 package dimensions and thermal resistance characteristics for heat dissipation planning in amplifier designs requiring low saturation voltage.
This part belongs to the BCX51...-BCX53... family of PNP Silicon AF Transistors. The BCX52 variant specifically offers a 60 V breakdown voltage, distinguishing it from the BCX51 (45 V) and BCX53 (80 V). The '16' suffix indicates a specific DC current gain binning configuration within the series.
Official substitutes within the same family include BCX51-16E6327HTSA1 and BCX53-16E6327HTSA1, provided voltage ratings align with circuit requirements. Complementary NPN replacements are available in the BCX54...BCX56 series.