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The BCX5216E6433HTMA1 is a PNP silicon audio frequency transistor from the BCX52 series, housed in an SOT-89 package. It features a collector-emitter voltage of 60 V and a continuous collector current of 1 A. The device supports a peak collector current of 1.5 mA for pulses up to 10 ms. Total power dissipation reaches 2 W at a case temperature of 120 °C or lower. The junction temperature maximum is 150 °C. DC current gain ranges from 100 to 250 at 150 mA. Transition frequency is typically 125 MHz.
Verify the specific suffix E6433HTMA1 against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Ensure the component meets RoHS compliance requirements as stated in the datasheet. Confirm that the SOT-89 footprint matches the target PCB design constraints before finalizing procurement orders.
Select this component when a PNP transistor with 60 V collector-emitter voltage and 1 A continuous current is required. It serves as the complementary type to the NPN BCX54...BCX56 series. Consider the thermal resistance characteristics and the need for heat sinking if operating near the maximum power dissipation limits in enclosed environments.
This part belongs to the BCX51...BCX53 family of PNP silicon AF transistors manufactured by Infineon Technologies. The BCX52 variant specifically offers a 60 V breakdown voltage rating. The family includes complementary NPN types such as the BCX54, BCX55, and BCX56 for push-pull configurations.
Officially documented complementary substitutes within the same product family include the BCX54, BCX55, and BCX56 NPN transistors.