SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX5310TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT-89 surface-mount package. It features a collector-emitter breakdown voltage of -80V and supports a continuous collector current of -1A with a peak pulse current of -2A. The device exhibits low saturation voltage below -500mV at -0.5A and a transition frequency of 150MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size and tape width. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, before finalizing procurement decisions.
Select this component when designing circuits requiring high voltage handling up to -80V combined with moderate current capabilities of -1A. Ensure thermal management strategies account for the specified power dissipation limits across varying copper area configurations on the printed circuit board.
This part belongs to the BCX51/52/53 series of PNP medium power transistors designed for general-purpose applications. It serves as the complementary counterpart to the BCX56 NPN transistor within the same family, sharing similar mechanical dimensions and operational characteristics.
BCX53TA
The maximum collector-emitter breakdown voltage (BVCEO) is -80V.
Yes, it is explicitly listed for use in AF drivers and output stages.
The transition frequency (fT) is 150MHz.