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The BCX5316QTA is a PNP medium power transistor manufactured by Diodes Incorporated in an SOT-89 package. It features a collector-emitter breakdown voltage of -80V and a continuous collector current rating of -1A. The device supports a peak pulse collector current of -2A and operates within a temperature range of -55°C to +150°C. Electrical characteristics include a maximum DC current gain (hFE) of 250 at -150mA, a transition frequency (fT) of 150MHz, and a collector-emitter saturation voltage below -500mV at -0.5A.
Verify the specific ordering suffix 'TA' corresponds to the required reel size and tape width configuration. Confirm that the component meets all applicable RoHS and environmental directives relevant to your manufacturing region. Ensure the procurement channel provides valid traceability documentation for automotive-grade parts.
Select this component when an automotive-qualified PNP transistor with high voltage tolerance is required. Compare against the complementary NPN type BCX5616Q for push-pull configurations. Evaluate thermal resistance requirements based on the expected copper area on the printed circuit board to ensure adequate heat dissipation.
This part belongs to the BCX5x16Q series of medium power transistors designed specifically for automotive environments. It shares mechanical dimensions with standard SOT-89 packages but includes specific quality controls and material compositions mandated by automotive industry standards.
The BCX5216QTA serves as a functional substitute if the lower -60V collector-emitter breakdown voltage specification is sufficient for the application design.
The maximum collector-emitter breakdown voltage (BVCEO) is -80V.
Yes, it is AEC-Q101 qualified, PPAP capable, and manufactured in IATF16949 certified facilities.
The complementary NPN type is the BCX5616Q.