SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX5316TA is a PNP medium power transistor manufactured by Diodes Incorporated, housed in an SOT89 surface-mount package. It features a collector-emitter breakdown voltage of -80V and supports a continuous collector current of -1A with a peak pulse current of -2A. The device exhibits low saturation voltage, typically less than -500mV at -0.5A, and offers a transition frequency of 150MHz. It operates within a temperature range of -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct packaging quantity and reel specifications. Confirm that the component meets all required environmental compliance standards for the intended deployment environment before finalizing procurement decisions.
Select this component when a PNP transistor with an -80V collector-emitter rating is required. Ensure the design accommodates the SOT89 package dimensions and thermal dissipation requirements. Verify that the minimum DC current gain meets the circuit's drive requirements under expected operating conditions.
This part belongs to the BCX51/52/53 family of PNP medium power transistors. The '16' designation indicates the specific -80V breakdown voltage variant. Complementary NPN types are available as the BCX54/55/56 series. An automotive-compliant version exists under a separate datasheet designation.
BCX53TC
The maximum collector-emitter breakdown voltage (BVCEO) is -80V.
Yes, it is provided in an SOT89 surface-mount package.
The typical collector-emitter saturation voltage is less than -500mV at a collector current of -0.5A.