SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX54Z is an NPN silicon power bipolar junction transistor manufactured by Nexperia. It is housed in a SOT-89 (SC-62) surface-mount plastic package. The device supports a maximum collector current of 1 A and a collector-emitter voltage of 45 V. Key electrical parameters include a collector-base voltage of 45 V, an emitter-base voltage of 5 V, and a power dissipation rating of 500 mW. The gain-bandwidth product is specified at 180 MHz, with a DC current gain ranging from 63 to 250 at 150 mA. Operating temperatures span from -55 °C to +150 °C.
Verify the specific suffix against official Nexperia documentation to confirm exact binning or tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's latest datasheet. Ensure the ordering part number matches the required gain group and packaging format for your production line.
Select this component when a single NPN transistor with 1 A continuous current handling is required in a SOT-89 footprint. Consider the 45 V breakdown voltage limits for circuit protection requirements. Evaluate the thermal resistance of the SOT-89 package against your system's heat dissipation capabilities to ensure operation within the 150 °C junction temperature limit.
This component belongs to the BCX54T series of NPN power transistors designed for general-purpose switching and amplification. It serves as a complement to the BCX51T PNP variant. The series is qualified under AEC-Q101 standards, indicating suitability for automotive critical applications requiring high reliability and robust performance in demanding environments.
The BCX54TF is a verified substitute within the same series offering identical electrical characteristics and pinout compatibility.