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The BCX55-10TF is an NPN power bipolar transistor from the Nexperia BCX55T series, housed in a SOT89 (SC-62) surface-mounted package. It supports a collector current of 1 A and withstands a collector-emitter voltage of 60 V. The device features a DC current gain range of 63 to 160 at VCE = 2 V and IC = 150 mA. It offers high power dissipation capability and is qualified under the AEC-Q101 standard for automotive applications.
Verify the specific suffix 'TF' against the official Nexperia datasheet to confirm tape-and-reel packaging details. Ensure the selected part matches the required hFE binning (BCX55-10T) for your circuit design. Confirm RoHS compliance status directly with the manufacturer or authorized distributor before finalizing procurement orders.
Select this component when a medium-power NPN transistor with a 60 V rating and 1 A continuous current capacity is required. The BCX55-10 variant provides a specific current gain window suitable for stable amplification. Consider the SOT89 package dimensions and thermal resistance characteristics for PCB layout and heat dissipation planning.
This device belongs to the BCX55T series of NPN power transistors manufactured by Nexperia. The series includes variants with different current gain specifications, such as the BCX55T and BCX55-16T. The PNP complement for this family is the BCX52T series. These components are designed for general-purpose switching and linear applications in compact surface-mount designs.
The BCX52-10TF serves as the direct PNP complement within the same series. Other BCX55T series members like BCX55T or BCX55-16T may be considered if different current gain ranges are acceptable.
The maximum peak collector current (ICM) is 2 A for a single pulse duration of tp ≤ 1 ms.
Yes, the product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101.
The typical transition frequency is 155 MHz, measured at VCE = 5 V, IC = 50 mA, and f = 100 MHz.