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BCX5516H6433XTMA1 is an NPN silicon audio frequency transistor in a SOT89 package. It features a collector-emitter voltage of 60 V and a continuous collector current of 1 A. The device has a maximum power dissipation of 2 W at case temperatures up to 120°C. Electrical characteristics include a DC current gain ranging from 25 to 250, a transition frequency of 100 MHz, and a collector-emitter saturation voltage of 0.5 V at 500 mA.
Verify the specific suffix H6433XTMA1 against official Infineon documentation to confirm packaging details and availability status. Ensure the component meets AEC-Q101 qualification requirements if automotive applications are intended. Cross-reference the BCX55-16 designation with the manufacturer's latest datasheet to validate electrical parameters before integration.
Select this component when a high-current NPN transistor with a 60 V breakdown voltage is required for audio applications. Consider the SOT89 package for thermal management needs exceeding standard surface-mount options. Evaluate the DC current gain range and transition frequency against circuit bandwidth requirements.
This part belongs to the BCX54...BCX56 family of NPN silicon AF transistors. It serves as the complementary counterpart to the BCX51...BCX53 PNP types within the same series. The family is characterized by high collector current and low saturation voltages suitable for general-purpose audio amplification tasks.
BCX55-16