SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The BCX56-16TX is an NPN power bipolar transistor from the Nexperia BCX56T series, housed in a SOT89 (SC-62) surface-mount package. It supports a collector-emitter voltage of 80 V and a continuous collector current of 1 A, with a peak pulse current capability of 2 A. The device offers three current gain selections; the -16 variant provides a DC current gain range of 100 to 250 at 150 mA. It features high power dissipation capabilities, reaching up to 1100 mW on a 1 cm² collector pad, and is qualified under AEC-Q101 standards for automotive reliability.
Verify the specific ordering suffix matches the required current gain bin (-16 for hFE 100-250). Confirm the package type is SOT89 and that the component meets AEC-Q101 requirements if used in automotive designs. Check the latest datasheet revision for any updates to thermal resistance or marking codes before finalizing procurement specifications.
Select the BCX56-16TX when an NPN transistor with 80 V breakdown and 1 A continuous current is needed in a compact SMD form factor. Choose this specific gain bin if the circuit requires a minimum hFE of 100 at 150 mA. Ensure adequate PCB copper area for the collector pad to utilize the higher power dissipation ratings effectively during operation.
This component belongs to the BCX56T series of medium power NPN transistors manufactured by Nexperia. The series includes complementary PNP devices (BCX53T) and variants with different gain ranges (-10T and -16T). All members share the same SOT89 physical footprint and electrical limits, differing primarily in their DC current gain specifications and corresponding marking codes.
Direct functional equivalents within the same series include BCX56-10T (hFE 63-160) and BCX56T (hFE 63-250). For pin-compatible replacements with identical electrical characteristics but different packaging, verify availability in alternative SMD packages. Always confirm thermal performance matches the new component's Rth(j-a) values.